| PART |
Description |
Maker |
| 2SK3679 |
Fuji Power MOSFET SuperFAP-G series Target Specification
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| I3504-6HMT3224B |
PRODUCT SPECIFICATIO FOR TFT LCM
|
ILLUMINANT CO., LTD
|
| FA5612 FA5612N FA5612P FA5613 |
FUJI Power Supply Control IC
|
Fuji Electric
|
| 2SK3875-01 28F256L18 |
Power MOSFET / Super FAP-G Series
FUJI POWER MOSFET Super FAP-G Series
|
FUJI[Fuji Electric]
|
| FA5640 FA5641 FA5642 |
Fuji Switching Power Supply Control IC
|
Fuji Electric
|
| 2SC4538R |
Ratigns and Caracteristics of Fuji Power Transistor
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| FA5626 |
Fuji Switching Power Supply Control IC
|
Fuji Electric
|
| 1MBH75D-060S 1MBH75D-060 FUJIELECTRICCOLTD-1MBH75D |
Ratings and characteristics of Fuji IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| 1MBH50-060 |
Fuji Discrete Package IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1MBC05D-060 |
Fuji Discrete Package IGBT
|
Fuji Electric
|
| ERW12-120 |
Ratings and characteristics of Fuji silicon diode
|
FUJI[Fuji Electric]
|
